Farid Medjdoub
8PUBLICATIONS
14CO-AUTHORS
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Publications (8)
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|Nov 27, 2024
Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors.François Grandpierron, Elodie Carneiro, Lyes Ben-Hammou
|Sep 28, 2024
Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices.Youssef Hamdaoui, Sofie S T Vandenbroucke, Sondre Michler
|Feb 25, 2023
Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier.Kathia Harrouche, Srisaran Venkatachalam, Lyes Ben-Hammou
|Sep 23, 2022
Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors.Idriss Abid, Youssef Hamdaoui, Jash Mehta
|Jan 20, 2021
Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications.Farid Medjdoub
|Oct 15, 2020
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors.Sven Besendörfer, Elke Meissner, Farid Medjdoub
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Frequent Collaborators
3 joint publications
Sven Besendörfer
2 joint publications
Matteo Meneghini
2 joint publications
Gaudenzio Meneghesso
2 joint publications
Elke Meissner
1 joint publications
Carlo De Santi
1 joint publications
Joff Derluyn
1 joint publications
Jochen Friedrich
1 joint publications
Tobias Erlbacher
1 joint publications
Jash Mehta
1 joint publications
Youssef Hamdaoui
