Yongliang Li
6PUBLICATIONS
13CO-AUTHORS
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Publications (6)
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|Apr 12, 2022
Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration.Shujuan Mao, Jianfeng Gao, Xiaobin He
|Mar 10, 2022
4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process.Xiaohong Cheng, Yongliang Li, Fei Zhao
|Jul 02, 2021
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics.Yongliang Li, Fei Zhao, Xiaohong Cheng
|Apr 30, 2021
Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods.Qide Yao, Xueli Ma, Hanxiang Wang
|Apr 25, 2020
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.Junjie Li, Yongliang Li, Na Zhou
|Feb 13, 2020
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.Junjie Li, Yongliang Li, Na Zhou
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Frequent Collaborators
4 joint publications
Wenwu Wang
4 joint publications
Jun Luo
2 joint publications
Hong Yang
2 joint publications
Junjie Li
2 joint publications
Fei Zhao
2 joint publications
Xiaohong Cheng
2 joint publications
Qingzhu Zhang
2 joint publications
Zhenhua Wu
2 joint publications
Huaxiang Yin
1 joint publications
Qide Yao
