在扫描电子显微镜中同时绘制阴极发光光谱和反射散射衍射模式的映射
Paul R Edwards1, G Naresh Kumar1,2, Jonathan J D McKendry3
1Department of Physics, SUPA, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, United Kingdom.
Nanotechnology
|July 2, 2024
概括
我们开发了一种新方法,可以同时从半导体薄膜中获取电子反射散射衍射和阴极发光信号. 这种技术允许在微型LED中进行详细的应变分析和光辐射表征.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 光电学是指光电子产品.
背景情况:
- 电子反射散射衍射 (EBSD) 和阴极光发射 (CL) 是半导体薄膜表征的扫描电子显微镜 (SEM) 关键技术.
- EBSD显示了晶体材料的应变,而CL显示了应变对光发射的影响.
- 传统方法面临几何冲突,防止同时获得EBSD和CL数据.
研究的目的:
- 介绍一种用于同时采集EBSD和CL信号的新方法.
- 为了使半导体材料的联合应变和光辐射分析.
- 为了研究深紫外线微LED的应变场和辐射波长变化.
主要方法:
- 在SEM过程中开发了一种技术,通过透明的样本基板收集CL信号.
- 在单个扫描过程中集成EBSD和CL获取.
- 应用了组合技术来分析深紫外线微型LED中的应变和辐射.
主要成果:
- 从半导体样本中成功实现了同时收集EBSD和CL数据.
- 证明了绘制应变分布和相关的排放波长变化的能力.
- 验证了该技术在深紫外线微型LED上的有效性.
结论:
- 这种方法克服了结合EBSD和CL分析的几何限制.
- 同时采集可以避免图像对齐问题,并最大限度地减少光束损坏.
- 这种方法提供了一个强大的工具来表征半导体器件中取决于应变的光电子特性.
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