一个Ku波段完全差异的低功率高输入P1dB低噪音放大器.
Sang-Rok Lee1,2, Joon-Hyung Kim1, Min-Seok Baek1
1Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|December 17, 2024
概括
本研究介绍了一种低功率的Ku频段低噪声放大器 (LNA),其输入线性和噪声排斥功能得到了增强. 完全差异化的设计实现了2.7dB的噪声值,并改善了1dB的压缩点 (P1dB) 以实现高效的无线通信.
科学领域:
- 电气工程 电气工程
- 微波工程 微波工程
- 半导体设备物理 半导体设备物理
背景情况:
- 低噪音放大器 (LNA) 是射频 (RF) 接收系统中的关键组件,影响系统的整体灵敏度和性能.
- 在LNA中同时实现高输入线性,低噪声值 (NF) 和低功耗是一个重要的设计挑战.
- 完全差异化架构在常态噪声排斥和声抑制方面具有优势,这对于先进的射频应用至关重要.
研究的目的:
- 设计和实施一个完全差分的,低功率的Ku频段低噪声放大器 (LNA).
- 增强输入1dB压缩点 (P1dB) 并改进常态噪声排斥和第二声波取消.
- 为了优化LNA以平衡功耗,噪声数字和线性.
主要方法:
- 采用了两阶段完全差异化的共同源 (CS) 拓.
- 在第一阶段利用大型晶体管来优化功率和NF.
- 在输出阶段内置了AB类偏差,以改善P1dB,功耗和线性.
- 使用65nm散装互补金属氧化物半导体 (CMOS) 技术制造了LNA.
主要成果:
- 在13.6GHz时达到2.7dB的最低噪声值 (NF).
- 在12.2GHz时获得了19.92dB的最大增益.
- 在 15.6 GHz 测量了输入 P1dB 的 -7.45 dBm 和输出 P1dB (OP1dB) 的 10.09 dBm.
- 在1V电源下,已证明11mW的低功耗.
- 实现了0.75mm × 0.35mm的紧核心尺寸.
结论:
- 拟议的完全差分的LNA有效地提高了输入P1dB,常态噪声排斥和线性.
- 该设计实现了具有竞争力的噪声量和低功耗的增益,适用于Ku频段应用.
- 65纳米CMOS实现证明了现代无线系统高性能,紧的LNA的可行性.
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