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Updated: Jan 10, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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可旋转调节的氧化物薄膜晶体管通过电动力学喷射打印的寄生导电路

Jae Won Na1, Yong Seon Hwang2, I Sak Lee2

  • 1Reality Device Research Division, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea.

ACS applied materials & interfaces
|November 26, 2025
PubMed
概括

研究人员通过在氧化 (IGZO) 通道上打印寄生导电路径 (PPCP) 来开发了一种新型的可摆调薄膜晶体管 (ST-TFT). 这项创新允许对先进显示器和低功耗电子产品进行精确的下值摆动 (SS) 控制.

关键词:
电水动力学打印 电水动力学打印灰度 AMOLED 驾驶情况多层次逻辑的多层次逻辑.低于值的摆动调制方法薄膜晶体管的使用方法

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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