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Updated: Jan 9, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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在纳米数字电路中,TID-Aware高效标准细胞表征及其应用到路径级计时性能

Lomash Chandra Acharya1, Khoirom Johnson Singh2, Neha Gupta1

  • 1Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, Roorkee, UK, 247667, INDIA.

Nanotechnology
|December 9, 2025
PubMed
概括

这项研究引入了一种新的方法,用于纳米级CMOS电路中的标准细胞的表征,并考虑了总电离剂量 (TID) 效应. 该方法在辐射环境中确保了准确的时间预测,提高了数字电路的可靠性.

关键词:
在纳米尺度CMOS.标准细胞表征 标准细胞表征这是一个TID-Aware延迟数据.TID-Aware定时关闭关闭时间总的电离剂量 总的电离剂量变化意识定时模型的变化

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