Related Experiment Video
Updated: Jul 16, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Energy-dependent tunneling in a quantum dot
K MacLean1, S Amasha, Iuliana P Radu
1Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. kmaclean@mit.edu
Abstract:
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.
Related Concept Videos
The Energies of Atomic Orbitals
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
The Bohr Model
The Quantum-Mechanical Model of an Atom
The de Broglie Wavelength
P-N junction

