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Energy-dependent tunneling in a quantum dot.

K MacLean1, S Amasha, Iuliana P Radu

  • 1Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. kmaclean@mit.edu

Physical Review Letters
|March 16, 2007
PubMed
Summary
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We measured electron tunneling rates on and off quantum dots using a sensitive charge sensor. Tunneling rates depend exponentially on voltage, and an elastic tunneling model accurately describes the data.

Area of Science:

  • Quantum physics
  • Mesoscopic physics
  • Solid-state physics

Background:

  • Quantum dots are nanoscale semiconductor structures with unique electronic properties.
  • Understanding electron tunneling is crucial for developing quantum devices.
  • Quantum point contact sensors offer high sensitivity for charge measurements.

Purpose of the Study:

  • To measure electron tunneling rates on and off a quantum dot.
  • To investigate the dependence of tunneling rates on experimental parameters.
  • To validate a theoretical model for elastic tunneling.

Main Methods:

  • Utilized a quantum point contact (QPC) as a charge sensor.
  • Measured electron tunneling rates by varying drain-source bias and gate voltages.

Related Experiment Videos

  • Analyzed the exponential dependence of tunneling rates on applied voltages.

    • Main Results:

    • Electron tunneling rates exhibit exponential dependence on drain-source bias.
    • Tunneling rates are also exponentially dependent on plunger gate voltages.
    • The tunneling process was confirmed to be elastic.

    Conclusions:

    • The study quantitatively describes electron tunneling on and off quantum dots.
    • A model based on dot energy and tunnel barrier height accurately predicts tunneling rates.
    • This work provides insights into charge transport in quantum dot systems.