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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Updated: Jun 15, 2026

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping
09:32

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Published on: July 2, 2012

Emissivity of microstructured silicon.

Patrick G Maloney1, Peter Smith, Vernon King

  • 1U.S. Army Communications-Electronics Research, Development, and Engineering Center, Research, Development and Engineering Command, Night Vision and Electronic Sensors Directorate, Science and Technology Division, 10221 Burbeck Road Fort Belvoir, Virginia 22060, USA. info@nvl.army.mil

Applied Optics
|March 4, 2010
PubMed
Summary
This summary is machine-generated.

Microstructured silicon surfaces exhibit tunable infrared emissivity, decreasing from 0.84 to 0.65 after measurement-induced annealing. This suggests potential applications in advanced optical and thermal management systems.

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Area of Science:

  • Materials Science
  • Optics
  • Surface Engineering

Background:

  • Microstructured silicon surfaces offer unique optical properties.
  • Understanding their thermal emissivity is crucial for applications like blackbody sources and microbolometers.

Purpose of the Study:

  • To measure and calculate the spectral and total emissivity of microstructured silicon surfaces.
  • To investigate the effect of measurement-induced annealing on emissivity.
  • To model the use of these surfaces in blackbody and microbolometer applications.

Main Methods:

  • Measured infrared transmittance and hemispherical-directional reflectance from 2.5 to 25 micrometers.
  • Calculated spectral emissivity for the measured wavelength range.
  • Determined hemispherical-total emissivity before and after annealing.
  • Compared emissivity with silicon substrates and black paint.

Main Results:

  • Spectral emissivity was calculated for microstructured silicon.
  • Hemispherical-total emissivity decreased from 0.84 to 0.65 for a sulfur-doped sample after annealing.
  • Secondary samples did not show a similar annealing effect, with reasons discussed.
  • Emissivity values were plotted and compared to reference materials.

Conclusions:

  • Microstructured silicon surfaces demonstrate tunable infrared emissivity.
  • Measurement-induced annealing significantly alters emissivity, particularly in sulfur-doped samples.
  • The findings support the potential use of microstructured silicon in thermal management and optical devices.