Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Rh(III)-Catalyzed [4 + 1] Annulation of Benzamides with CF<sub>3</sub>-Ynones as a C<sub>1</sub> Synthon: Access to CF<sub>3</sub>-Containing Isoindolinones.

Organic letters·2026
Same author

Wired and Wireless Photosynthetic Biohybrids: Design, Materials, and Mechanisms.

Chemical reviews·2026
Same author

Endogenous Engineering Reprograms Extracellular Vesicles for Enhanced Therapeutic Function.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

A Lens into the Cu Nanograin by <i>In Situ</i> Vibrational Spectroscopy.

Journal of the American Chemical Society·2026
Same author

EZH2 inhibition triggers a context-specific ACSS2-H3K9ac-HK2 metabolic circuit in EZH2 non-mutant solid tumors.

Cellular oncology (Dordrecht, Netherlands)·2026
Same author

Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective.

Nano letters·2026
Same journal

Intrinsic Superconducting Gap in Bilayer KCa<sub>2</sub>Fe<sub>4</sub>As<sub>4</sub>F<sub>2</sub> and Decoupled Monolayer FeAs.

Nano letters·2026
Same journal

Programmable Hydrogen-Assisted Chemical Vapor Deposition Growth and Bipolar Transport in Two-Dimensional MoO<sub>2</sub> Nanoflakes.

Nano letters·2026
Same journal

A Curvature-Modulated Strategy for Single-Atom Catalysts toward Reciprocal Regulation in Li-S Batteries.

Nano letters·2026
Same journal

Vacuum Pyrolysis Engineered CoSb/C Scaffold for Sodium Metal Anodes with Sodiophilic and Superionic Interphase.

Nano letters·2026
Same journal

Hexagonal SiGe Quantum Dots in Nanowires.

Nano letters·2026
Same journal

Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Jun 13, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Semiconductor nanowire: what's next?

Peidong Yang1, Ruoxue Yan, Melissa Fardy

  • 1Department of Chemistry, University of California, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA. p_yang@berkeley.edu

Nano Letters
|April 17, 2010
PubMed
Summary
This summary is machine-generated.

This perspective critically reviews a decade of nanowire research, highlighting the balance between discovering new phenomena and application-focused performance. Both fabrication approaches are crucial for understanding these nanostructures.

More Related Videos

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Related Experiment Videos

Last Updated: Jun 13, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Area of Science:

  • Materials Science
  • Nanotechnology
  • Condensed Matter Physics

Background:

  • Nanowires represent a significant class of nanostructures with unique properties.
  • Research in nanowires has advanced considerably over the last decade.
  • Understanding fundamental phenomena is key to unlocking nanowire potential.

Purpose of the Study:

  • To critically assess the progress in nanowire research over the past ten years.
  • To analyze the balance between fundamental discovery and application-driven benchmarking.
  • To provide insights into future research trends in the nanowire field.

Main Methods:

  • Literature review and critical analysis of published research.
  • Discussion of both bottom-up and top-down fabrication approaches.
  • Perspective on the evolution of nanowire science and technology.

Main Results:

  • Identified a tension between fundamental scientific discovery and performance benchmarking in nanowire applications.
  • Acknowledged the significant contributions of both bottom-up and top-down methods to understanding nanowires.
  • Highlighted the importance of continued research into novel phenomena and applications.

Conclusions:

  • The field of nanowire research has matured, with ongoing debate on research priorities.
  • Both fabrication strategies are essential for advancing the field.
  • Future research should focus on a synergistic approach to fundamental understanding and practical applications.