Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jun 5, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Elementary processes in nanowire growth.

K W Schwarz1, J Tersoff

  • 1IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA.

Nano Letters
|December 30, 2010
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires.

Nano letters·2016
Same author

The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

Nano letters·2015
Same author

Stable Self-Catalyzed Growth of III-V Nanowires.

Nano letters·2015
Same author

Wetting transition for carbon nanotube arrays under metal contacts.

Physical review letters·2015
Same author

Strain-driven mound formation of substrate under epitaxial nanoparticles.

Nano letters·2014
Same author

Jumping-catalyst dynamics in nanowire growth.

Physical review letters·2014
Same journal

Intrinsic Superconducting Gap in Bilayer KCa<sub>2</sub>Fe<sub>4</sub>As<sub>4</sub>F<sub>2</sub> and Decoupled Monolayer FeAs.

Nano letters·2026
Same journal

Programmable Hydrogen-Assisted Chemical Vapor Deposition Growth and Bipolar Transport in Two-Dimensional MoO<sub>2</sub> Nanoflakes.

Nano letters·2026
Same journal

A Curvature-Modulated Strategy for Single-Atom Catalysts toward Reciprocal Regulation in Li-S Batteries.

Nano letters·2026
Same journal

Vacuum Pyrolysis Engineered CoSb/C Scaffold for Sodium Metal Anodes with Sodiophilic and Superionic Interphase.

Nano letters·2026
Same journal

Hexagonal SiGe Quantum Dots in Nanowires.

Nano letters·2026
Same journal

Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.

Nano letters·2026
See all related articles

This study models nanowire growth using three core processes: facet growth, droplet behavior, and new facet formation. The model accurately predicts various nanowire morphologies and growth behaviors observed in experiments.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Nanowire growth exhibits complex morphological phenomena.
  • Understanding these phenomena is crucial for controlling nanowire properties.

Purpose of the Study:

  • To develop a model explaining complex nanowire growth phenomena.
  • To investigate the interplay of fundamental processes in nanowire formation.

Main Methods:

  • Developed an explicit model for vapor-liquid-solid (VLS) nanowire growth.
  • Incorporated three elementary processes: facet growth, droplet statics, and new facet introduction.
  • Performed numerical simulations under varying conditions.

Main Results:

More Related Videos

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
08:58

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation

Published on: December 21, 2015

Related Experiment Videos

Last Updated: Jun 5, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
08:58

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation

Published on: December 21, 2015

  • The model predicts both free-standing wire growth and lateral growth with catalyst droplet movement.
  • Simulations show that external perturbations can induce kinking in nanowires.
  • Different growth conditions alter the shape of the nanowire growth tip.

    • Conclusions:

    • The interplay of three elementary processes governs complex nanowire morphology.
    • The model successfully reproduces experimentally observed nanowire growth behaviors.
    • This framework provides insights into controlling nanowire fabrication.