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Updated: Jun 3, 2026
11:14
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
A review of strain analysis using electron backscatter diffraction
Stuart I Wright1, Matthew M Nowell, David P Field
1EDAX-TSL, 392 East 12300 South, Draper, UT 84020, USA. stuart.wright@ametek.com
Summary
Electron Backscatter Diffraction (EBSD) is a powerful tool for analyzing crystallographic microstructure. This review explores EBSD
Area of Science:
- Materials Science
- Geology
- Crystallography
Background:
- Electron Backscatter Diffraction (EBSD) systems are widely adopted in materials science and geology research.
- EBSD provides crucial insights into the crystallographic aspects of microstructures.
- There is growing interest in quantifying submicron-scale strain using EBSD.
Purpose of the Study:
- To review the current technological capabilities of EBSD for strain analysis.
- To understand the practical applications, assumptions, and limitations of EBSD in strain characterization.
Main Methods:
- Analysis of the effects of elastic and plastic strain on individual EBSD patterns.
- Exploration of EBSD mapping for characterizing plastic strain.
- Discussion of the sensitivity of various calculation and mapping parameters.
Main Results:
- Detailed examination of how elastic and plastic strain influence EBSD patterns.
- Evaluation of EBSD mapping techniques for plastic strain quantification.
- Identification of the potential and limitations of EBSD for submicron strain analysis.
Conclusions:
- EBSD is a valuable technique for understanding crystallographic microstructure and quantifying strain.
- Understanding the effects of strain on EBSD patterns is crucial for accurate analysis.
- The review highlights both the strengths and weaknesses of EBSD in strain characterization.
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