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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Electrical characteristics of Ge-based metal-insulator-semiconductor devices with Ge3N4 dielectrics formed by plasma

Gaku Okamoto1, Katsuhiro Kutsuki, Takuji Hosoi

  • 1Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.

Journal of Nanoscience and Nanotechnology
|July 23, 2011
PubMed

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