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Related Experiment Video

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Conductance through multilayer graphene films.

Marcelo A Kuroda¹, J Tersoff, Dennis M Newns

¹IBM T. J. Watson Research Center, Yorktown Heights, NY, United States. mkuroda@illinois.edu

|August 13, 2011

Summary

This summary is machine-generated.

Ballistic conductance in multilayer graphene-metal junctions depends on metal choice. Palladium (Pd) shows the best performance for up to four graphene layers, influenced by crystal momentum matching.

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Understanding electron transport in graphene-metal interfaces is crucial for nanoelectronic devices.
Previous studies on single-wall carbon nanotubes show metal-dependent conductance.

Purpose of the Study:

Investigate ballistic conductance in multilayer graphene-metal junctions.
Determine the influence of metal electrodes and graphene film thickness on conductance.
Identify optimal metals for graphene-based electronic applications.

Main Methods:

Ab initio calculations using the local density approximation (LDA).
Modeling of multilayer graphene (up to four layers, Bernal stacking) between metallic electrodes.
Analysis of metal-graphene epitaxial relationships and their impact on electronic structure.

Main Results:

Conductance decay varies with metal type; some saturate with film thickness.
Observed differences are attributed to crystal momentum mismatch between metal and graphene.
Thin film conductance is dominated by metal-graphene bonding, similar to carbon nanotubes.

Conclusions:

Palladium (Pd) is identified as the most effective metal electrode for multilayer graphene films (up to 4 layers).
Crystal momentum matching is a key factor determining conductance behavior in thicker films.
Metal-graphene interfacial bonding significantly influences conductance in thin films.