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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Dark current reduction of Ge photodetector by GeO₂ surface passivation and gas-phase doping

Mitsuru Takenaka1, Kiyohito Morii, Masakazu Sugiyama

  • 1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. takenaka@mosfet.t.u-tokyo.ac.jp

Optics Express
|April 20, 2012
PubMed

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