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Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
Mikhail Sobolev1, Mikhail Buyalo, Idris Gadzhiev
1Ioffe Physical Technical Institute, Russian Academy of Sciences, St, Petersburg, 194021, Russia. m.sobolev@mail.ioffe.ru.
Nanoscale Research Letters
|October 4, 2012
Abstract:
Passive mode-locking is achieved in two sectional lasers with an active layer based on superlattice formed by ten layers of quantum dots. Tunnel coupling of ten layers changes the structural polarization properties: the ratio between the transverse electric and transverse magnetic polarization absorption coefficients is less by a factor of 1.8 in the entire electroluminescence spectrum range for the superlattice.
