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Related Concept Videos

MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Temperature Measurement Sites01:14

Temperature Measurement Sites

A thermometer measures body temperature. The common sites for measuring body temperature are the oral cavity, axillary region, temporal artery, and skin surface, such as the forehead, abdomen, and axilla. True core body temperature is assessed in the rectum, tympanic membrane, pulmonary artery, esophagus, and urinary bladder.
Oral: When assessing oral temperature, the thermometer tip should be placed under the tongue in the posterior sublingual pocket. It offers accurate readings and can be...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

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A 0.0016 mm² 0.64 nJ leakage-based CMOS temperature sensor.

Pablo Ituero1, Marisa López-Vallejo, Carlos López-Barrio

  • 1Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Avenida Complutense 30, 28040 Madrid, Spain. pituero@die.upm.es.

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Summary

This study introduces a new CMOS temperature sensor utilizing leakage currents for accurate measurements. It achieves high precision and robustness against manufacturing variations, making it suitable for advanced integrated circuits.

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Semiconductor Physics

Background:

  • Accurate temperature sensing is critical for integrated circuit (IC) performance and reliability.
  • Traditional temperature sensors face challenges with process variations and energy consumption in advanced nodes.
  • Leakage currents in Metal-Oxide-Semiconductor (CMOS) technology offer a basis for temperature-dependent sensing.

Purpose of the Study:

  • To develop a highly accurate and robust CMOS temperature sensor for the 65 nm node.
  • To mitigate the impact of process fluctuations on sensor performance.
  • To propose a novel charging mechanism for enhanced fabrication variability tolerance.

Main Methods:

  • Utilizing the thermal dependencies of leakage currents in CMOS transistors operating in the subthreshold regime.
  • Implementing a ratio of two capacitor discharge time measurements to compensate for process variations.
  • Introducing a novel capacitor charging mechanism for improved robustness.

Main Results:

  • Achieved a sensor resolution of 0.28 °C.
  • Demonstrated a 3σ inaccuracy of 1.17 °C over the 40-110 °C temperature range.
  • The sensor occupies a small area (0.0016 mm²) with low energy consumption (47.7-633 pJ/sample).

Conclusions:

  • The proposed CMOS temperature sensor offers a robust and accurate solution for integrated circuit applications.
  • The novel design effectively compensates for process variations, enhancing reliability.
  • The sensor's small footprint and low power consumption make it ideal for miniaturized electronic systems.