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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile

Mu-Shih Yeh1, Yung-Chun Wu1, Kuan-Cheng Liu1

  • 1Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.

Nanoscale Research Letters
|November 19, 2014
PubMed

Keywords:
Fin field-effect transistorFlash memoryGate-all-aroundJunctionlessNonvolatile memoryOne-time programmingSingle poly-SiThree-dimensional

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