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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile

Mu-Shih Yeh1, Yung-Chun Wu1, Kuan-Cheng Liu1

  • 1Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.

Nanoscale Research Letters
|November 19, 2014
PubMed
Summary

A new single poly-Si gate-all-around (GAA) junctionless FinFET (JL-FinFET) enables one-time programmable nonvolatile memory (NVM). This device offers excellent data retention for future integrated circuit applications.

Keywords:
Fin field-effect transistorFlash memoryGate-all-aroundJunctionlessNonvolatile memoryOne-time programmingSingle poly-SiThree-dimensional

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Device Physics

Background:

  • Nonvolatile memory (NVM) is crucial for modern electronics.
  • Existing NVM technologies face challenges in scalability and integration.
  • Gate-all-around (GAA) architectures offer improved electrostatic control.

Purpose of the Study:

  • To demonstrate a feasible single poly-Si gate-all-around (GAA) junctionless FinFET (JL-FinFET) for one-time programming (OTP) NVM applications.
  • To evaluate the performance and retention characteristics of the proposed JL-FinFET.

Main Methods:

  • Fabrication of a single poly-Si GAA JL-FinFET.
  • Electrical characterization of the device, including programming and retention measurements.
  • Analysis of memory window and charge storage over time.

Main Results:

  • The developed JL-FinFET is suitable for OTP NVM applications.
  • The device exhibits excellent data retention, maintaining a 2 V memory window after 10^4 seconds.
  • Extrapolation suggests 95% charge storage for 10 years.

Conclusions:

  • The single poly-Si GAA JL-FinFET presents a viable solution for NVM.
  • Its simple integration on various substrates (Si wafer, glass, flexible) enhances its applicability.
  • Potential future applications include multi-layer Si ICs, displays, and 3D stacked flash memory.