Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage.

Nanoscale advances·2026

Same author

Single-crystalline BaTiO<sub>3</sub>-based ferroelectric capacitive memory via membrane transfer.

Science advances·2025

Same author

Sub-unit-cell-segmented ferroelectricity in brownmillerite oxides by phonon decoupling.

Nature materials·2025

Same author

Hafnia-Based Ferroelectric Transistor with Poly-Si Gates for Gate-First Three-Dimensional NAND Structures.

ACS applied materials & interfaces·2024

Same author

Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology.

ACS applied materials & interfaces·2024

Same author

Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors.

Science advances·2024

Search research articles

Related Experiment Video

Updated: Apr 19, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Resistive switching memory based on bioinspired natural solid polymer electrolytes.

Niloufar Raeis Hosseini¹, Jang-Sik Lee

¹Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, South Korea.

|December 17, 2014

Summary

Researchers developed a reliable, solution-processed resistive-switching memory device using chitosan, a natural organic material. This eco-friendly, cost-effective device shows promise for next-generation nonvolatile nanoelectronics.

Keywords:

chitosan natural solid polymers redox-based memory resistive switching memory solution processes

More Related Videos

Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications

Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications

Published on: August 12, 2013

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Related Experiment Videos

Last Updated: Apr 19, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications

Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications

Published on: August 12, 2013

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Area of Science:

Materials Science
Nanoscience
Organic Electronics

Background:

The demand for advanced nonvolatile memory devices is increasing.
Developing sustainable and cost-effective materials for nanoelectronics is crucial.
Chitosan, a natural biopolymer, offers potential for electronic applications.

Purpose of the Study:

To demonstrate a solution-processed, chitosan-based resistive-switching memory device.
To evaluate the performance and reliability of this organic memory device.
To explore the potential of chitosan for next-generation nonvolatile nanoelectronics.

Main Methods:

Fabrication of a Pt/Ag-doped chitosan/Ag memory device structure using a solution-processing technique.
Characterization of bipolar resistive switching behavior.
Assessment of data retention and device performance on flexible substrates.

Main Results:

The chitosan-based memory device exhibited reproducible and reliable bipolar resistive switching characteristics.
The device could be switched between high and low resistance states.
Data retention measurements confirmed the reliability of the nonvolatile memory.
Transparent, Ag-embedded chitosan films on flexible substrates showed comparable performance.

Conclusions:

A cost-effective, environmentally benign memory device using chitosan has been successfully demonstrated.
The solution-processed chitosan-based memory device meets the functional requirements for nonvolatile memory operations.
Natural organic materials like chitosan are promising candidates for future nanoelectronic devices.