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Updated: Apr 9, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current
Yen Chih Chiang1, Bing Cheng Lin, Kuo Ju Chen
1Institute of Lighting and Energy Photonics, National Chiao Tung University, No.301, Gaofa 3rd Rd., Guiren Dist., Tainan City, 71150, Taiwan, yenchih.chiang@gmail.com.
Abstract:
For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.
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