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Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier
Chiyui Ahn, Scott W Fong, Yongsung Kim1
1Samsung Advanced Institute of Technology (SAIT) , Suwon, 443-803, South Korea.
Nano Letters
|August 27, 2015
Summary
Researchers improved phase-change memory (PCM) energy efficiency by adding a graphene layer. This graphene-phase-change memory (G-PCM) reduces programming current by 40% and enhances device endurance.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Phase-change memory (PCM) is a crucial data storage technology.
- A significant challenge in PCM is reducing the programming current for individual devices to improve energy efficiency.
Purpose of the Study:
- To enhance the energy efficiency of phase-change memory devices.
- To investigate the impact of incorporating a graphene layer on PCM performance.
Main Methods:
- A graphene layer was integrated at the interface between the Ge2Sb2Te5 (GST) phase-change material and the tungsten (W) bottom electrode heater.
- The programming current and endurance of the resulting Graphene-PCM (G-PCM) devices were compared to control devices without graphene.
Main Results:
- G-PCM devices exhibited approximately 40% lower RESET current compared to control devices.
- The enhanced performance is attributed to the graphene layer providing interfacial thermal resistance, confining heat within the active PCM volume.
- The G-PCM demonstrated programming endurance of up to 10^5 cycles.
Conclusions:
- Integrating a graphene layer is an effective strategy to reduce the programming current and improve the energy efficiency of PCM.
- Graphene incorporation can potentially enhance PCM endurance by mitigating atomic migration and material segregation at the electrode interface.
