Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

85
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
85
Metallic Solids02:37

Metallic Solids

21.3K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
21.3K
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

75
Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
75
Unit Cells01:18

Unit Cells

82
A crystal's internal structure is an orderly array of atoms, ions, or molecules, and the details of this array significantly influence the solid's properties. In a crystal, periodically repeating 'structural motifs' - which could be atoms, molecules, or groups thereof - create a 'space lattice.' This is essentially a three-dimensional, infinite array of points, each surrounded by its neighbors in an identical way, forming the basic structure of the crystal.A 'unit cell' is a theoretical...
82
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

810
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
810

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

On-Water Surface Synthesis of 2D Conjugated Metal-Organic Framework Films With Controllable Layer Orientation Enabling High-Performance Chemiresistive Sensing.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Ultranarrow nanochannels in a staggered two-dimensional polymer membrane enhance electric double-layer coverage for osmotic energy harvesting.

Nature communications·2026
Same author

Single-Metal-Atom Chains at Mirror Twin Boundaries in Transition Metal Dichalcogenides: Electronic, Magnetic, and Catalytic Properties.

ACS applied materials & interfaces·2026
Same author

Defects That Magnetize Beyond Monolayer PtSe<sub>2</sub>.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Strain-Field-Induced Bandgap Opening in Bilayer Graphene.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Revisiting the Robin-Day Classification through Switchable Electronic States in Multimetallic Vanadium Oxides.

Journal of the American Chemical Society·2026
Same journal

Enriching Magneto-Optical Functionalities in Iron Garnet Films via Compensation-Driven Magnetic Tuning.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Quartz-Like Supramolecular Glass Enabled by Host-Guest Size Mismatch.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Reliable and Reusable All-Solid-State Contact-Type Pre-Lithiation Platform for High-Performance All-Solid-State Batteries.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Cross-Scale Design of Electrocatalytic Systems for Steering Alcohol Oxidation Toward High-Value-Added Chemicals.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Synergistic Control of Radiative Decay and Exciton Splitting Dynamics for Efficient Organic Solar Cells Processed by Non-Halogenated Solvent.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles

Related Experiment Video

Updated: Mar 29, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.7K

A Single-Material Logical Junction Based on 2D Crystal PdS2.

Mahdi Ghorbani-Asl1,2, Agnieszka Kuc1,3, Pere Miró1,4

  • 1Department of Physics and Earth Science, Jacobs University Bremen, Campus Ring 1, 28759, Bremen, Germany.

Advanced Materials (Deerfield Beach, Fla.)
|December 4, 2015
PubMed
Summary
This summary is machine-generated.

Researchers designed a novel logical junction using 1T palladium disulfide (PdS2) to eliminate contact resistance in advanced 2D transistors. This breakthrough enables integration limits beyond 2.45 nm by minimizing heat dissipation through quantum confinement effects.

Keywords:
PdS2density-functional theorysingle-material transistorstunnel diodes

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.7K

Related Experiment Videos

Last Updated: Mar 29, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.7K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.7K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Conventional 2D transistors face integration limits due to contact resistance.
  • Contact resistance impedes efficient heat dissipation, a critical factor in nanoscale devices.

Purpose of the Study:

  • To design a single-material logical junction with negligible contact resistance.
  • To explore quantum-confinement effects in 1T PdS2 for transistor applications.
  • To determine the integration limit for 2D transistors based on heat dissipation.

Main Methods:

  • Utilized quantum-confinement effects in 1T palladium disulfide (PdS2).
  • Designed a metallic bilayer of 1T PdS2 as electrodes.
  • Employed a semiconducting channel monolayer of 1T PdS2.

Main Results:

  • Achieved a single-material logical junction with negligible contact resistance.
  • Demonstrated that heat dissipation is governed by tunnel loss.
  • Identified that tunnel loss becomes negligible at channel lengths > 2.45 nm.

Conclusions:

  • The designed 1T PdS2 junction overcomes the contact resistance limitation in 2D transistors.
  • The integration limit for conventional 2D transistors is established at 2.45 nm.
  • This approach paves the way for more efficient nanoscale electronic devices.