Graphene growth on Ge(100)/Si(100) substrates by CVD method.
Iwona Pasternak1, Marek Wesolowski1, Iwona Jozwik1
1Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland.
Scientific Reports
|February 23, 2016
Summary
Researchers developed a new method for growing high-quality graphene on germanium-on-silicon substrates using chemical vapor deposition (CVD). This technique overcomes challenges associated with silicon carbide formation, enabling uniform, large-area graphene films for microelectronics.
Area of Science:
- Materials Science
- Nanotechnology
- Microelectronics
Background:
- Direct deposition of uniform, large-area graphene is crucial for microelectronic device integration.
- Graphene growth on silicon (Si) is hindered by challenging carbide formation.
- Existing methods face limitations in achieving high-quality graphene on nonmetallic substrates.
Purpose of the Study:
- To develop a direct deposition process for high-quality graphene on nonmetallic substrates.
- To overcome the limitations of graphene growth on Si wafers.
- To investigate graphene growth on Ge(100)/Si(100) substrates using chemical vapor deposition (CVD).
Main Methods:
- Chemical Vapor Deposition (CVD) method was employed for graphene growth.
- Germanium-on-silicon (Ge(100)/Si(100)) wafers were used as substrates.
- A stochastic model was applied to describe and optimize the graphene growth process.
Main Results:
- High-quality graphene layers were successfully grown on Ge(100)/Si(100) substrates.
- Raman spectroscopy confirmed uniform monolayer graphene films.
- The full width at half maximum (FWHM) of the 2D band was measured at 32 cm(-1), indicating high quality.
Conclusions:
- Graphene growth on Ge(100)/Si(100) via CVD offers a viable alternative to Si substrates.
- This method addresses the carbide formation issue, enabling high-quality graphene deposition.
- The findings pave the way for advanced microelectronic devices utilizing uniform graphene films.
