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Updated: Mar 16, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
Byoungjun Park1, Kyoungah Cho1, Sungsu Kim1
1Department of Electrical Engineering, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul, 136-701, Korea.
Abstract:
Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm(2)/V·s and their on/off ratio was in the range of 10(4)-10(5). The threshold voltages of the programmed and erased states were negligibly changed up to 10(3) cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.
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