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High-resolution non-destructive three-dimensional imaging of integrated circuits
Mirko Holler1, Manuel Guizar-Sicairos1, Esther H R Tsai1
1Paul Scherrer Institut, 5232 Villigen PSI, Switzerland.
Nature
|March 17, 2017
Summary
X-ray ptychography now enables non-destructive 3D imaging of nanoelectronic devices with 14.6nm resolution. This breakthrough addresses critical metrology gaps in chip manufacturing and reverse engineering.
Area of Science:
- Materials Science
- Nanotechnology
- Imaging Science
Background:
- Modern nanoelectronics face imaging limitations due to small feature sizes and complex 3D structures.
- A metrology gap hinders design feedback, quality control, and reverse engineering of integrated circuits.
Purpose of the Study:
- To demonstrate X-ray ptychography for non-destructive 3D imaging of integrated circuits.
- To achieve high lateral resolution for detailed device geometry and elemental mapping.
Main Methods:
- Utilized X-ray ptychography, a high-resolution coherent diffractive imaging technique.
- Applied the technique to integrated circuits of both known and unknown designs.
Main Results:
- Achieved lateral resolution down to 14.6 nanometers in all directions.
- Obtained detailed 3D device geometries and corresponding elemental maps.
- Visualized the integration of devices within the chip structure.
Conclusions:
- X-ray ptychography offers a significant advancement over destructive techniques like electron microscopy.
- This method enhances chip inspection and reverse engineering capabilities.
- Future developments promise increased efficiency and reduced scan times for nanoelectronic metrology.
