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Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface.

Zhiyuan Sun1, David N Seidman1,2, Lincoln J Lauhon1

  • 1Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States.

Nano Letters
|June 29, 2017
PubMed
Summary
This summary is machine-generated.

Dopants in silicon nanowires affect etching. Nanowire kinking changes dopant distribution, allowing control over electronic properties and shape through facet-dependent doping and etching.

Keywords:
Nanowireatom-probe tomographydopantliquid−solid interfaceselective etchingvapor−liquid−solid growth

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Dopants critically influence semiconductor electronic properties and etching behavior.
  • Nanofaceting at the liquid-solid interface during vapor-liquid-solid (VLS) growth impacts dopant distribution in nanowires.
  • Facet-dependent doping combined with selective etching offers a method to control nanowire properties and morphology.

Purpose of the Study:

  • To investigate boron dopant distribution in gold-catalyzed VLS-grown silicon nanowires.
  • To correlate dopant profiles with the evolving shape of the liquid-solid growth interface.
  • To demonstrate the utility of dopant-selective etching in visualizing growth interface morphology.

Main Methods:

  • Atom-probe tomography was employed to analyze boron dopant distribution.
  • Vapor-liquid-solid (VLS) growth was used to synthesize silicon nanowires with gold catalysts.
  • Dopant-selective etching techniques were applied to reveal surface features.

Main Results:

  • Silicon nanowires exhibited kinking between equivalent <112> directions.
  • Alternating radial doping profiles (uniform and nonuniform) were observed along the nanowires.
  • These doping variations were attributed to transitions between concave and convex faceted liquid-solid interfaces.

Conclusions:

  • The shape of the liquid-solid interface during VLS growth directly influences dopant distribution in silicon nanowires.
  • Nanowire kinking events are associated with changes in interface faceting and subsequent doping profiles.
  • Dopant-selective etching is a powerful tool for correlating nanowire morphology with anisotropic doping patterns.