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Multilayer Graphene-WSe2 Heterostructures for WSe2 Transistors

Hao-Ling Tang1,2, Ming-Hui Chiu1, Chien-Chih Tseng1

  • 1Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia.

ACS Nano
|November 29, 2017
PubMed
Summary

This study demonstrates p-type field-effect transistors using graphene-tungsten diselenide lateral heterojunctions. Doping enhances performance, enabling complementary metal-oxide semiconductor applications.

Keywords:
WSe2contactgrapheneheterostructuretransistortransition metal dichalcogenides

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