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Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
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In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
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A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
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In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
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Red-Enhanced Photon Detection Module Featuring a 32 × 1 Single-Photon Avalanche Diode Array.

Francesco Ceccarelli1, Angelo Gulinatti1, Ivan Labanca1

  • 1Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milano, Italy.

IEEE Photonics Technology Letters : a Publication of the IEEE Laser and Electro-Optics Society
|March 28, 2018
PubMed
Summary
This summary is machine-generated.

A new red-enhanced single-photon avalanche diode (RE-SPAD) array offers high photon detection efficiency up to 57% at 600 nm. This advanced photon detector is ideal for red/near-infrared applications like fluorescence spectroscopy.

Keywords:
RE-SPAD arraySingle-molecule fluorescence spectroscopy (SMFS)red-enhanced SPAD (RE-SPAD)single-photon avalanche diode (SPAD)single-photon counting

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Area of Science:

  • Photonics and Optical Engineering
  • Semiconductor Device Physics

Background:

  • Single-photon avalanche diodes (SPADs) are crucial for low-light detection.
  • Existing SPADs often have limited efficiency in the red and near-infrared spectrum.

Purpose of the Study:

  • To develop and characterize a novel 32x1 red-enhanced single-photon avalanche diode (RE-SPAD) array.
  • To achieve high photon detection efficiency (PDE) in the red/near-infrared (NIR) range.

Main Methods:

  • Fabrication of a RE-SPAD array using custom technology with large-area pixels (50-µm diameter).
  • Experimental characterization of the RE-SPAD module's performance, including PDE, dark count rate (DCR), and optical crosstalk.
  • Evaluation under specific bias conditions (V = 15 V).

Main Results:

  • Achieved a peak PDE of 57% at 600 nm and 33% at 800 nm.
  • Reported a dark count rate in the kHz range.
  • Demonstrated a low optical crosstalk probability of 0.29%.

Conclusions:

  • The developed RE-SPAD array exhibits excellent performance, particularly in the red/NIR spectrum.
  • The module's high PDE makes it suitable for demanding applications requiring red/NIR sensitivity.
  • The RE-SPAD array meets the stringent requirements for multispot single-molecule fluorescence spectroscopy.