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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor

Hyoung-Do Kim, Jong Heon Kim, Kyung Park1

  • 1School of Integrated Technology , Yonsei University , Incheon 21983 , Republic of Korea.

ACS Applied Materials & Interfaces
|April 19, 2018
PubMed
Summary

Indium oxynitride (InON) semiconductor films show enhanced stability in air and under stress. These findings are crucial for developing more robust thin-film transistors (TFTs).

Keywords:
Indium oxynitride (InON)air stabilitydensity functional theory (DFT)first principle calculationnegative bias illumination stress (NBIS)thin-film transistor

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