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Author Spotlight: Enhancing CryoEM Resolution Using Graphene-Coated Grids
Published on: September 8, 2023
Wafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors
Mircea Dragoman1, Mircea Modreanu2, Ian M Povey2
1National Institute for Research and Development in Microtechnology (IMT), PO Box 38-160, 023573 Bucharest, Romania.
Abstract:
We have fabricated and electrically characterized at the wafer scale tens of metal-ferroelectric (HfZrO)-semiconductor capacitors and metal-graphene monolayer-ferroelectric (HfZrO)-semiconductor capacitors with the same top electrode dimensions. We have found that the memory windows of the capacitors containing graphene are 3-4 times larger than the ferroelectric capacitors without graphene, and increase even more after annealing. This physical effect can be attributed to the additional electric field exerted by the graphene monolayer on the HfZrO ferroelectric semiconductor capacitor, and to the negative thermal extension coefficient of graphene, respectively.
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