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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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706
Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors
Hyeonju Lee1, Jin-Hyuk Kwon2, Jin-Hyuk Bae2
1Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
Journal of Nanoscience and Nanotechnology
|November 30, 2018
Summary
Electrical stability of indium oxide (In₂O₃) thin-film transistors (TFTs) differs in air versus vacuum. Vacuum operation enhances mobility, while air exposure degrades performance due to water molecule interactions.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Indium oxide (In₂O₃) is a promising n-type semiconductor for thin-film transistors (TFTs).
- Solution-processed In₂O₃ films offer potential for low-cost fabrication.
- Understanding electrical stability is crucial for device reliability.
Purpose of the Study:
- To investigate the electrical stability of solution-processed In₂O₃ thin-film transistors (TFTs).
- To compare device performance under vacuum and atmospheric air conditions.
- To elucidate the factors influencing the electrical stability of In₂O₃ TFTs.
Main Methods:
- Fabrication of bottom-gate/top-contact In₂O₃ TFTs using solution processing.
- Characterization of nanocrystalline In₂O₃ film morphology.
- Electrical testing of TFTs under vacuum and atmospheric air environments.
Main Results:
- In₂O₃ TFTs operated in n-type enhancement mode with nanocrystalline morphology.
- Device operation under vacuum showed a slight increase in field-effect mobility.
- Operation in atmospheric air led to decreased mobility and increased hysteresis.
Conclusions:
- Electrical stability of In₂O₃ TFTs is influenced by electron trapping at grain boundaries.
- Interaction with water molecules in atmospheric air negatively impacts device performance.
- Grain boundary characteristics and environmental factors are critical for In₂O₃ TFT stability.
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