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Published on: May 15, 2021
Electric field driven multi-state magnetization switching in triangular nanomagnets on piezoelectric substrate.
Nasir Mehmood1, Xiao Song1, Guo Tian1
1Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
Electric fields can control magnetic switching in multiferroic nanomagnets using magneto-elastic coupling. This enables multistate switching for advanced memory and logic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Multiferroic heterostructures with magnetostrictive nanomagnets and piezoelectric substrates offer potential for next-generation magneto-elastic memory and logic devices.
- Electric field control of magnetic states via magneto-elastic coupling is crucial for advanced device functionalities.
Purpose of the Study:
- To investigate multistate magnetization switching in triangular soft magnetic nanomagnets on a piezoelectric substrate.
- To explore the use of localized strain-induced magnetic anisotropy for deterministic magnetization control.
Main Methods:
- Micromagnetic simulations were employed to analyze the behavior of magnetic nanomagnets.
- Investigated the effect of electric field-induced piezostrain on magnetic anisotropy and magnetization switching.
Main Results:
- Demonstrated multistate magnetization switching in a triangular nanomagnet using localized strain-induced uniaxial magnetic anisotropy pulses.
- Achieved 60° magnetization switching per pulse, with complete clockwise and counter-clockwise switching cycles.
- Established relationships between critical strain pulse magnitude and nanomagnet geometric parameters (thickness, lateral size).
Conclusions:
- Localized strain-induced magnetic anisotropy, combined with shape anisotropy, enables precise multistate magnetization switching.
- This local gating scheme facilitates electric field-induced ultra-fast, deterministic, and reversible magnetization switching.
- The findings are key for developing advanced magnetoelastic and magnetoelectric memory and logic devices.
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