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Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances

Jing Li1, Yan Liu2, Genquan Han3

  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, People's Republic of China.

Nanoscale Research Letters
|May 26, 2019
PubMed

Keywords:
GermaniumNegative capacitancePassivation time

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