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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electrical Engineering

Background:

  • Germanium (Ge) n-type Metal-Oxide-Semiconductor Field-Effect Transistors (nMOSFETs) are crucial for next-generation electronics due to higher carrier mobility than silicon.
  • Achieving high performance in Ge nMOSFETs requires optimizing gate dielectrics and interface properties.

Purpose of the Study:

  • To investigate the impact of ozone (O3) treatment on the performance of Ge nMOSFETs with ZrO2 gate dielectric.
  • To compare the effectiveness of O3 treatment, O3 post-treatment with Al2O3 interfacial layer, and no O3 treatment on electron mobility.

Main Methods:

  • Fabrication of Ge nMOSFETs using ZrO2 as the gate dielectric.
  • Application of different interfacial treatments: O3 treatment, O3 post-treatment with an Al2O3 interfacial layer, and no treatment.
  • Electrical characterization to measure effective electron mobility (μeff) at various inversion charge densities (Qinv).

Main Results:

  • Ge nMOSFETs with ZrO2 dielectric and O3 treatment achieved a peak effective electron mobility (μeff) of 682 cm²/Vs at an equivalent oxide thickness (EOT) of 0.83 nm, surpassing Si universal mobility.
  • O3 post-treatment combined with an Al2O3 interfacial layer resulted in a significant μeff enhancement, approximately 50% higher than Si universal mobility at a medium Qinv of 5 × 10¹² cm⁻².

Conclusions:

  • Ozone treatment is effective in improving the performance of Ge nMOSFETs with ZrO2 gate dielectrics.
  • The combination of O3 post-treatment and an Al2O3 interfacial layer offers a pathway to dramatically enhance electron mobility in Ge nMOSFETs.
  • ZrO2 dielectric shows significant potential for realizing high-performance Ge nMOSFET devices.