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Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances.

Jing Li1, Yan Liu2, Genquan Han3

  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, People's Republic of China.

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Summary

Researchers demonstrated the negative capacitance (NC) effect in HfZrOₓ-based field-effect transistors (FETs). These NC-FETs show improved electrical properties compared to traditional metal-oxide-semiconductor FETs, paving the way for efficient logic applications.

Keywords:
GermaniumNegative capacitancePassivation time

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Device Engineering

Background:

  • Negative capacitance (NC) effect in ferroelectric materials offers a route to overcome fundamental limitations in transistor switching.
  • Ferroelectric HfZrOₓ is a promising material for realizing the NC effect in advanced electronic devices.
  • Understanding the interplay between ferroelectric capacitance (CFE) and underlying metal-oxide-semiconductor capacitance (CMOS) is crucial for device optimization.

Purpose of the Study:

  • To experimentally demonstrate and investigate the negative capacitance (NC) effect in HfZrOₓ-based field-effect transistors (FETs).
  • To compare the performance of NC-FETs with conventional metal-oxide-semiconductor (MOS) FETs.
  • To analyze the impact of passivation time on the matching between CFE and CMOS and its effect on device characteristics.

Main Methods:

  • Fabrication of HfZrOₓ-based metal-insulator-semiconductor (MIS) transistors with varying passivation times.
  • Electrical characterization of the fabricated transistors to evaluate key performance metrics.
  • Analysis of device performance based on the capacitance matching between the ferroelectric layer (CFE) and the underlying MOS structure (CMOS).

Main Results:

  • Demonstration of the negative capacitance (NC) effect in HfZrOₓ-based FETs.
  • Achieved improved drain current (IDS), subthreshold swing (SS), and transconductance (Gm) in NC-FETs compared to control MOS-FETs.
  • Identified optimal performance for NC-FETs with 40 min passivation, attributed to better CFE and CMOS matching, outperforming devices with 60 min passivation.
  • Obtained non-hysteretic transfer characteristics, beneficial for logic applications, although SS below 60 mV/decade was not achieved.

Conclusions:

  • HfZrOₓ-based NC-FETs exhibit enhanced electrical properties, showing potential for improved logic device performance.
  • The passivation time significantly influences the CFE-CMOS matching, thereby affecting the overall device characteristics.
  • While sub-60 mV/decade SS was not reached, the non-hysteretic behavior is a key advantage for practical logic applications.