Efficiency Enhancement of Solid-State CuInS₂ Quantum Dot-Sensitized Solar Cells by Improving the Charge Recombination

Copper indium sulfide quantum dots (CuInS₂ QDs) were incorporated into a nanocrystalline TiO₂ film by using spin coating-assisted successive ionic layer adsorption and reaction process to fabricate CuInS₂ QD-sensitized TiO₂ photoelectrodes for the solid-state quantum dot-sensitized solar cell (QDSSC) applications. The result shows that the photovoltaic performance of solar cell is extremely dependent on the number of cycles, which has an appreciable impact on the coverage ratio of CuInS₂ on the surface of TiO₂ and the density of surface defect states. In the following high-temperature annealing process, it is found that annealing TiO₂/CuInS₂ photoelectrode at a suitable temperature would be beneficial for decreasing the charge recombination and accelerating the charge transport. After annealing at 400 °C, a significantly enhanced photovoltaic properties of solid-state CuInS₂ QDSSCs are obtained, achieving the power conversion efficiency (PCE) of 3.13%, along with an open-circuit voltage (V_OC) of 0.68 V, a short-circuit photocurrent density (J_SC) of 11.33 mA cm^-2, and a fill factor (FF) of 0.41. The enhancement in the performance of solar cells is mainly ascribed to the suppression of charge recombination and the promotion of the electron transfer after annealing.