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Inversion Symmetry Breaking Induced Valley Hall Effect in Multilayer WSe2
Hongming Guan1, Ning Tang1,2,3, Hao Huang4
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , P.R. China.
Researchers observed the valley Hall effect (VHE) in multilayer tungsten diselenide (WSe2) at room temperature. This demonstrates the potential of WSe2 for future valleytronics applications by controlling the K (K’) valley degree of freedom.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Two-dimensional transition metal dichalcogenides (TMDs) exhibit a K (K') valley degree of freedom (DOF).
- Valleytronics, which utilizes this valley DOF for electronic applications, is an emerging research area.
- Controlling and observing valley-dependent phenomena is crucial for advancing valleytronics.
Purpose of the Study:
- To investigate the possibility of observing the valley Hall effect (VHE) in multilayer tungsten diselenide (WSe2).
- To explore the role of spatial-inversion symmetry breaking in inducing valley polarization.
- To assess the potential of WSe2 as a material for valleytronics.
Main Methods:
- Applying an out-of-plane electric field to break spatial-inversion symmetry in multilayer WSe2.
- Observing and analyzing the resulting charge carrier behavior and spatial polarization.
- Characterizing the emergence of non-zero Berry curvature.
Main Results:
- The valley Hall effect (VHE) was successfully observed in multilayer WSe2 at room temperature.
- An out-of-plane electric field induced spatial-inversion symmetry breaking.
- Carriers at the K (K') valley were deflected to opposite sides, showing spatial polarization.
Conclusions:
- The observation of VHE confirms the generation of the K (K') valley degree of freedom in multilayer WSe2.
- Multilayer WSe2 is a promising candidate material for future valleytronics devices.
- This study opens new avenues for exploring valley-dependent phenomena in 2D materials.
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