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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Oxygen Vacancy Gradient Enabled Tunable Threshold Voltage of Solution-Processed Metal Oxide Homojunction Thin-Film
Pengsheng Li1, Guangcan Wang1, Siying Gao1
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Abstract:
Threshold voltage (VTH) tunability is challenging for metal oxide thin-film transistors (TFTs) in future applications in multilevel logic, sensing, and neuromorphic computing. Herein, solution-processed metal oxide homojunction thin films are designed by integrating pristine In2O3 and poly(vinyl alcohol)-doped In2O3 layers with different stacking sequence and doping ratio. When configured as back-gated TFTs, asymmetric VTH tuning over a large range (from -10.50 to 5.27 V) as well as tunable operation mode, Ion/Ioff, field-effect mobility, and carrier concentration are achieved. These impressive behaviors result from oxygen vacancy gradient-induced built-in electric fields, which across the homojunction interface govern carrier redistribution within the channel. With tunable VTH, the homojunction TFTs are first constructed as n-channel-metal-oxide-semiconductor inverters, achieving a maximum voltage gain of 10.06. Furthermore, the tunable VTH enables multithreshold signal encoding, which is exploited to realize four-level blood glucose concentration monitoring, displaying an impressive accuracy of over 85%.
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