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Published on: December 5, 2015
Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles
Wen-Ming Luo1, Zhi-Gang Shao2, Mou Yang1
1Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, GPETR Center for Quantum Precision Measurement, Guangdong Engineering Technology Research Center of Efficient Green Energy and Environment Protection Materials, SPTE, South China Normal University, Guangzhou, 510006, China.
Nitrogen-doped molybdenum disulfide (MoS2) exhibits a strong circular photogalvanic effect, significantly larger than linear effects. This study analyzes photocurrent zero points in this 2D material.
Area of Science:
- Condensed Matter Physics
- Materials Science
- 2D Materials
Background:
- The photogalvanic effect is crucial for optoelectronic devices.
- Monolayer molybdenum disulfide (MoS2) is a promising 2D material.
- Nitrogen doping can tune the electronic properties of MoS2.
Purpose of the Study:
- Investigate the photogalvanic effect in nitrogen-doped monolayer MoS2.
- Analyze the mechanisms behind photocurrent zero points.
- Compare linear and circular photogalvanic effects.
Main Methods:
- First-principles calculations.
- Non-equilibrium Green function formalism.
- Band structure and joint density of states analysis.
Main Results:
- Identified mechanisms for photocurrent vanishing points.
- Circular photogalvanic effect originates from spin-orbit coupling-induced band splitting.
- Circular photogalvanic effect is two orders of magnitude stronger than linear effect.
Conclusions:
- Nitrogen-doped MoS2 shows a significant circular photogalvanic response.
- Understanding zero points is key for device design.
- This material holds potential for advanced photodetectors and spintronic applications.
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