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Related Concept Videos

E1 Reaction: Kinetics and Mechanism02:46

E1 Reaction: Kinetics and Mechanism

17.3K
Here, in contrast to the E2 reaction mechanism, we delve into the aspects of the E1 reaction mechanism, which has two steps: rate-limiting loss of the leaving group and abstraction of the beta hydrogen by a weak base. Typically, the experimental proof for the E1 mechanism is via kinetic studies or isotope studies. While the former demonstrates the first-order kinetics—the dependence of the reaction solely on substrate concentration—the latter proves the abstraction of hydrogen only...
17.3K
E2 Reaction: Kinetics and Mechanism02:45

E2 Reaction: Kinetics and Mechanism

12.1K
SN2 substitutions and E2 eliminations of alkyl halides proceed via a concerted pathway. While the nucleophile attacks the alpha carbon in SN2 reactions, it functions as a strong base and abstracts a beta hydrogen in the E2 mechanism. The rate-limiting transition state in E2 elimination reactions is characterized by partially broken carbon–hydrogen and carbon–halogen bonds and a partially formed pi bond between the alpha and beta carbons. The beta hydrogen and halide are eliminated...
12.1K

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Updated: Dec 20, 2025

Atomically Traceable Nanostructure Fabrication
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Mechanisms of Thermal Atomic Layer Etching.

Steven M George1

  • 1Department of Chemistry, University of Colorado, Boulder, Colorado 80309-0215, United States.

Accounts of Chemical Research
|June 2, 2020
PubMed
Summary

Atomic layer etching (ALE) is crucial for advanced semiconductor manufacturing, enabling precise material removal. Thermal ALE offers isotropic etching, essential for 3D device fabrication beyond lithography limits.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Processing

Background:

  • Critical dimensions in semiconductor manufacturing are shrinking below 10 nm, necessitating atomic layer control.
  • Atomic Layer Deposition (ALD) achieves conformal thin film growth, but precise material removal requires Atomic Layer Etching (ALE).
  • ALE relies on sequential, self-limiting reactions for surface modification and volatile byproduct release.

Purpose of the Study:

  • To review and categorize the diverse mechanisms of thermal Atomic Layer Etching (ALE).
  • To highlight the importance of thermal ALE for fabricating advanced 3D semiconductor devices.
  • To discuss the role of thermal ALE in enabling maskless and area-selective nanofabrication.

Main Methods:

  • Examination of fluorination and ligand-exchange mechanisms for thermal ALE.

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  • Exploration of "conversion etch" mechanisms involving substrate surface transformation.
  • Analysis of thermal ALE mechanisms based on oxidation, halogenation, self-limiting surface ligands, and temperature modulation.

    • Main Results:

    • Multiple thermal ALE mechanisms exist, including fluorination/ligand-exchange, conversion etch, oxidation, halogenation, and surface ligand/temperature modulation.
    • These mechanisms provide pathways for isotropic material removal with atomic layer precision.
    • Thermal ALE is essential for fabricating 3D semiconductor structures and enabling selective etching.

    Conclusions:

    • Thermal ALE is a critical nanofabrication technique for future semiconductor devices, especially for 3D architectures.
    • Understanding various thermal ALE mechanisms is key to advancing beyond lithography limits.
    • Thermal ALE offers unique capabilities for selective and maskless processing, crucial for next-generation electronics.