Three-dimensional metal-semiconductor-metal AlN deep-ultraviolet detector

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Devices

Background:

• Conventional metal-semiconductor-metal (MSM) ultraviolet (UV) detectors face limitations in structural adaptability, electrical field strength, and carrier transit length.
• Aluminum nitride (AlN) is a promising material for deep-UV (DUV) detection applications.

Purpose of the Study:

• To demonstrate a novel three-dimensional (3D) MSM structural AlN-based deep-UV (DUV) detector.
• To investigate the performance enhancement of the 3D-MSM device compared to conventional MSM detectors.

Main Methods:

• Fabrication of a 3D-MSM AlN detector using trench etching and metal deposition.
• Integration of the device onto a silicon substrate via flip bonding to create a flip-chip 3D-MSM (FC-3DMSM) device.
• Characterization of time-dependent photoresponse for both 3D-MSM and conventional MSM devices.

Main Results:

• The 3D-MSM AlN detector exhibited significantly improved responsivity and response speed over conventional MSM detectors.
• The enhanced performance is attributed to an intensified electrical field from the 3D metal electrode configuration.
• Inhibition of vertical carrier transport in the 3D structure increased carrier collection efficiency and migration speed.

Conclusions:

• The flip-chip 3D-MSM (FC-3DMSM) AlN detector design offers superior performance for DUV detection.
• This work provides a pathway for advancing the design and fabrication of high-performance AlN-based DUV detectors.