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Published on: June 23, 2018
Design of an Edge-Detection CMOS Image Sensor with Built-in Mask Circuits
Minhyun Jin1, Hyeonseob Noh1, Minkyu Song1
1Department of Semiconductor Science, Dongguk University, Seoul 04620, Korea.
This study introduces a new complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) with integrated circuits for low-power edge detection and normal image capture. This innovation enables high-speed, efficient computer vision applications.
Area of Science:
- Computer Vision
- Semiconductor Devices
- Image Sensors
Background:
- Traditional computer vision systems often require complex image signal processing for edge detection.
- Low-power consumption is a critical requirement for many embedded and mobile vision applications.
Discussion:
- The proposed CMOS image sensor (CIS) integrates mask circuits directly onto the sensor for selective edge-detection or normal 8-bit image capture.
- Edge detection is achieved by comparing neighboring column data within in-column memories post-analog-to-digital conversion, eliminating the need for an external image signal processor.
- This on-chip integration facilitates high-speed and low-power edge image acquisition.
Key Insights:
- Successfully demonstrated edge image capture at a maximum frame rate of 60 fps.
- A prototype sensor with 1920 × 1440 resolution was fabricated using a 90-nm process.
- Achieved remarkably low power consumption of 9.4 mW at 60 fps.
Outlook:
- This technology holds promise for enhancing the efficiency of edge detection in low-power computer vision systems.
- Further development could lead to more sophisticated on-chip image processing capabilities.
- Potential applications include mobile devices, autonomous systems, and embedded vision platforms.
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