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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation

Hyeok Jeon1, Seung-Geun Kim1, June Park2

  • 1Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, South Korea.

Small (Weinheim an Der Bergstrasse, Germany)
|November 18, 2020
PubMed

Keywords:
2D materials2D-based ferroelectric field effect transistorsHfO2-based ferroelectric materialsoptic-neural synapsespassivation effects

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