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Electrical Coupling for Monolithic 3-D Integrated Circuit Consisting of Feedback Field-Effect Transistors
1Information Communication Technology (ICT) & Robot Engineering and Institute of Information Technology Convergence (IITC), Hankyong National University, Anseong 17579, Republic of Korea.
Journal of Nanoscience and Nanotechnology
|March 14, 2021
Summary
This study simulated monolithic 3-dimensional integrated circuits (M3DICs) with stacked feedback field-effect transistors (FBFETs). Thinner interlayer dielectrics significantly impact FBFET electrical characteristics, especially in Case 2 M3DICs.
Area of Science:
- Semiconductor Device Physics
- Integrated Circuit Design
- Materials Science
Background:
- Monolithic 3-dimensional integrated circuits (M3DICs) offer advanced functionalities.
- Feedback field-effect transistors (FBFETs) are key components in M3DICs.
- Understanding electrical coupling in stacked FBFETs is crucial for device optimization.
Purpose of the Study:
- To investigate the electrical coupling effects in two M3DIC configurations with vertically stacked FBFETs.
- To analyze the impact of interlayer dielectric thickness (T_ILD) on FBFET electrical characteristics.
- To optimize FBFET structure for logic device applications by reducing memory window.
Main Methods:
- Technology Computer-Aided Design (TCAD) simulations were employed.
- Two M3DIC cases with different FBFET stacking arrangements (N-type/P-type and P-type/N-type) were simulated.
- Variations in doping concentration and channel length were explored for FBFET optimization.
Main Results:
- Electrical characteristics (threshold voltage, capacitance, transconductance) of FBFETs were analyzed concerning T_ILD.
- Significant variations in tier2 FBFET characteristics were observed below T_ILD thresholds of 15-20 nm in Case 1.
- Case 2 M3DICs exhibited greater sensitivity of tier2 FBFET electrical characteristics to T_ILD compared to Case 1.
Conclusions:
- Interlayer dielectric thickness critically influences the performance of stacked FBFETs in M3DICs.
- The stacking configuration of FBFETs (Case 1 vs. Case 2) affects their susceptibility to electrical coupling.
- TCAD simulations provide valuable insights for designing optimized M3DICs with FBFETs.
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