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Updated: Nov 10, 2025

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer
Seyed Amir Fouad Farshchi Yazdi1, Matteo Garavaglia2, Aldo Ghisi1
1Department of Civil and Environmental Engineering, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy.
Abstract:
A geometrical modification on silicon wafers before the bonding process, aimed to decrease (1) the residual stress caused by glass frit bonding, is proposed. Finite element modeling showed that (2) by introducing this modification, the wafer out-of-plane deflection was decreased by 34%. Moreover, (3) fabricated wafers with the proposed geometrical feature demonstrated an improvement for the (4) warpage with respect to the plain wafers. A benefit for curvature variation and overall shape of the (5) bonded wafers was also observed.
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