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Related Experiment Video

Updated: Nov 3, 2025

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

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Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE).

Michael S Gerlt¹, Nino F Läubli², Michel Manser¹

¹Department of Mechanical and Process Engineering, Institute for Mechanical Systems, 8092 Zurich, Switzerland.

|June 2, 2021

Summary

This study presents optimized Bosch processes for deep reactive ion etching (DRIE). New methods significantly reduce etch lag, enabling high-aspect-ratio microfabrication for MEMS and biomedical devices.

Keywords:

deep reactive ion etching fabrication high aspect ratio process optimization reduced etch lag small structures

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Area of Science:

Materials Science and Engineering
Microtechnology and Nanotechnology
Biomedical Engineering

Background:

Deep reactive ion etching (DRIE) using the Bosch process is crucial for MEMS and microfluidics.
Etch lag in DRIE limits aspect ratio and affects device functionality.
Complex oxide masks are often required for deep etching.

Purpose of the Study:

To reduce reactive ion etching lag in the Bosch process.
To enable fabrication of high-aspect-ratio microstructures with improved stability.
To enhance miniaturization in biomedical research applications.

Main Methods:

Development of an optimized two-step Bosch process.
Implementation of an improved three-step Bosch process.
Characterization of etch lag and structural stability.

Main Results:

Reduced etch lag to below 1.5% using the optimized two-step process.
Successful fabrication of 6 μm wide structures up to 180 μm deep.
Maintained structural stability in fabricated microdevices.

Conclusions:

Optimized Bosch processes significantly mitigate etch lag in DRIE.
Advanced DRIE techniques enable high-precision microfabrication for demanding applications.
This research advances capabilities for miniaturized biomedical devices.