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Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films
Yi-Fan Zhao1, Ling-Jie Zhou1, Fei Wang1
1Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Nano Letters
|September 1, 2021
Summary
Researchers grew magnetic topological insulator MnBi2Te4 films using molecular beam epitaxy. They identified distinct magnetic phases and observed layer-dependent behavior, offering insights for optimizing film quality.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- MnBi2Te4 is an intrinsic magnetic topological insulator.
- The quantum anomalous Hall (QAH) effect has been observed in exfoliated MnBi2Te4 flakes.
Purpose of the Study:
- To grow high-quality MnBi2Te4 films using molecular beam epitaxy (MBE).
- To investigate the thickness-dependent transport properties of MnBi2Te4 films.
- To understand the magnetic phase contributions in thin films.
Main Methods:
- Molecular beam epitaxy (MBE) for film growth down to 1 septuple layer (SL).
- Thickness-dependent electrical transport measurements.
- Analysis of magnetic hysteresis loops and anomalous Hall (AH) components.
Main Results:
- Nonsquare hysteresis loops observed in antiferromagnetic MnBi2Te4 films thicker than 2 SL.
- Two distinct AH components identified: one from MnBi2Te4, another from Mn-doped Bi2Te3.
- The MnBi2Te4 AH component exhibits even-odd layer-dependent behavior.
Conclusions:
- MBE growth allows for precise control of MnBi2Te4 film thickness.
- Understanding phase contributions is crucial for optimizing magnetic topological insulator properties.
- Insights gained can guide improved MBE growth conditions for high-quality MnBi2Te4 films.
Keywords:
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