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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Related Experiment Video

Updated: Oct 18, 2025

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Solution-Processed Perovskite Field-Effect Transistor Artificial Synapses.

Beomjin Jeong^1,2, Paschalis Gkoupidenis¹, Kamal Asadi^1,3,4

¹Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany.

Advanced Materials (Deerfield Beach, Fla.)

|October 5, 2021

Summary

This summary is machine-generated.

Researchers developed a novel perovskite transistor using a ferroelectric gate to control ion movement, enabling non-volatile artificial synapses. This breakthrough paves the way for advanced neuromorphic computing applications.

Keywords:

artificial synapses ferroelectrics field-effect transistors ion transport metal halide perovskites neuromorphic devices

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Published on: September 8, 2017

Area of Science:

Materials Science
Neuroscience
Electronics

Background:

Metal halide perovskites are promising semiconductors for artificial synapses due to their ionic and electronic transport properties.
Developing stable, non-volatile 3-terminal perovskite artificial synapses is challenging due to difficulties in regulating mobile ions.

Purpose of the Study:

To engineer a solution-processed perovskite transistor for artificial synapses by implementing a ferroelectric gate.
To demonstrate non-volatile control over mobile ions in perovskite channels for synaptic applications.

Main Methods:

Fabrication of a 3-terminal perovskite transistor with a ferroelectric gate.
Utilizing ferroelectric polarization to induce a non-volatile electric field and fix mobile ions.
Modulating the electronic conductance of the perovskite channel through partial ferroelectric polarization.

Main Results:

Achieved multi-state channel conductance by controlling ferroelectric polarization.
Demonstrated successful emulation of artificial synapse functions, including long-term plasticity, short-term plasticity, and spike-timing-dependent plasticity.
Showcased excellent linearity in synaptic plasticity emulation.

Conclusions:

The ferroelectric-gated perovskite transistor effectively functions as an artificial synapse.
Regulating ion dynamics in perovskites via ferroelectric gates offers a versatile strategy for synaptic electronics.
This approach provides a generic route for developing perovskite-based neuromorphic devices.