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Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
Yen-Wei Yeh1, Su-Hui Lin2, Tsung-Chi Hsu1
1Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Nanoscale Research Letters
|November 18, 2021
Summary
Atomic Layer Deposition (ALD) effectively passivates semiconductor devices, addressing sidewall defects from etching. This technique enhances light efficiency and reliability in micro-light-emitting diodes and lasers.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Device Fabrication
Background:
- Miniaturization of nano-devices leads to increased sidewall defects during etching.
- Traditional plasma-enhanced chemical vapor deposition lacks sufficient step coverage for nanoscale features.
- Atomic Layer Deposition (ALD) offers a solution due to its self-limiting surface reactions.
Purpose of the Study:
- To review and compare recent research on ALD passivation for micro-light-emitting diodes (micro-LEDs) and vertical-cavity surface-emitting lasers (VCSELs).
- To highlight the benefits of ALD in addressing fabrication challenges in advanced optoelectronic devices.
Main Methods:
- Review of existing literature on ALD passivation techniques applied to micro-LEDs and VCSELs.
- Analysis of ALD's self-limiting growth mechanism for conformal film deposition.
- Comparison of different ALD passivation strategies and their impact on device performance.
Main Results:
- ALD provides Å-level thickness control and excellent step coverage, crucial for nanoscale device fabrication.
- ALD passivation significantly enhances light efficiency in micro-LEDs and VCSELs.
- Reduced leakage currents and improved device reliability were observed with ALD passivation methods.
Conclusions:
- Atomic Layer Deposition is a key enabling technology for fabricating advanced semiconductor optoelectronic devices.
- ALD passivation effectively mitigates etching-induced defects, leading to superior device performance and reliability.
- The findings support the continued development and application of ALD in next-generation nano-devices.
