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ITO film stack engineering for low-loss silicon optical modulators.

Evgeniy S Lotkov1,2, Aleksandr S Baburin3,4, Ilya A Ryzhikov3,5

  • 1FMN Laboratory, Bauman Moscow State Technical University, Moscow, 105005, Russia. lotevg@bmstu.ru.

Scientific Reports
|April 16, 2022
PubMed
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This summary is machine-generated.

This study presents advanced Indium Tin Oxide (ITO) thin films for low-loss silicon photonics. Optimized ITO films enable high-performance electro-optic modulators with sub-dB insertion loss.

Area of Science:

  • Materials Science
  • Photonics
  • Electrical Engineering

Background:

  • Indium Tin Oxide (ITO) is crucial for integrated optical modulators in silicon photonics.
  • Optimizing ITO thin films for high extinction ratio and low insertion loss remains a key challenge.

Purpose of the Study:

  • To demonstrate e-beam evaporated ITO films for advanced electro-optic modulators.
  • To investigate the relationship between ITO film structure, carrier concentration, and optical properties.
  • To achieve significant ITO dielectric permittivity variation for modulator applications.

Main Methods:

  • E-beam evaporation of 20 nm-thick ITO films with controlled carrier concentrations.
  • Investigation of various ITO film crystalline structures (amorphous to coarsely crystalline).

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  • Analysis of oxygen migration during ITO crystallization.
  • Experimental comparison of ITO-based electro-optic modulator performance.

    • Main Results:

    • Achieved ITO films with a low extinction coefficient (0.14) at 1550 nm.
    • Demonstrated tunable carrier concentrations from 1 to 10 × 10^20 cm^-3.
    • Observed significant ITO dielectric permittivity variation (Δn=0.199, Δk=0.240) under ±16 V.
    • Confirmed potential for GHz-range electro-optical modulators with sub-dB losses.

    Conclusions:

    • E-beam evaporated ITO films are highly promising for low-loss silicon photonics.
    • Control over ITO film crystallization and carrier concentration is key to optimizing modulator performance.
    • These findings pave the way for next-generation integrated GHz electro-optical modulators.